Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BLS8G4S26BFSD.16FD2 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 14.9

测试中的平均数值
更快的写入速度，GB/s

2,404.5 11.5

测试中的平均数值

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 104

左右 -316% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 25
读取速度，GB/s

3,192.0 14.9
写入速度，GB/s

2,404.5 11.5
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 2466

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HYMP125S64CP8-S6 2GB

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G Skill Intl F4-4000C19-8GTZSW 8GB

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Smart Modular SF4641G8CK8IEHLSBG 8GB

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Samsung M386B4G70DM0-CMA4 32GB

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Crucial Technology CT16G4DFD8266.C16FN 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HMA81GS6MFR8N-UH 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Corsair CMK32GX4M2A2666C16 16GB

Corsair CMK32GX4M2A2666C16 16GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Dust Leopard DDR4-2400 C16 8GB 8GB

Kingston 99U5584-004.A00LF 4GB

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Crucial Technology CT4G4DFS8266.M8FG 4GB

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