RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M395T2863QZ4-CF76 1GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
比较
Samsung M395T2863QZ4-CF76 1GB vs Essencore Limited IM44GU48A30-FGGHAB 4GB
总分
Samsung M395T2863QZ4-CF76 1GB
总分
Essencore Limited IM44GU48A30-FGGHAB 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
更快的读取速度,GB/s
3
17
测试中的平均数值
需要考虑的原因
Essencore Limited IM44GU48A30-FGGHAB 4GB
报告一个错误
低于PassMark测试中的延时,ns
65
104
左右 -60% 更低的延时
更快的写入速度,GB/s
8.7
2,404.5
测试中的平均数值
更高的内存带宽,mbps
21300
6400
左右 3.33 更高的带宽
规格
完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Essencore Limited IM44GU48A30-FGGHAB 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
104
65
读取速度,GB/s
3,192.0
17.0
写入速度,GB/s
2,404.5
8.7
内存带宽,mbps
6400
21300
Other
描述
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
no data
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
786
1875
Samsung M395T2863QZ4-CF76 1GB RAM的比较
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Essencore Limited IM44GU48A30-FGGHAB 4GB RAM的比较
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
SK Hynix HMT41GU7MFR8A-H9 8GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-3600C19-8GSXF 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK64GX4M4C3200C16 16GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C16-4GRB 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KHX3600C18D4/16GX 16GB
Kingston 9905458-017.A01LF 4GB
Gold Key Technology Co Ltd GKE800SO102408-2666A 8GB
AMD R534G1601U1S-UO 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Samsung M471B5273EB0-CK0 4GB
Apacer Technology GD2.11173T.001 4GB
SK Hynix HMT325S6CFR8C-H9 2GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3000C16-16GRS 16GB
Crucial Technology CT51264BA1339.C16F 4GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
报告一个错误
×
Bug description
Source link