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Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2666C15-8GVK 8GB

Samsung M395T2863QZ4-CF76 1GB vs G Skill Intl F4-2666C15-8GVK 8GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
G Skill Intl F4-2666C15-8GVK 8GB

G Skill Intl F4-2666C15-8GVK 8GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 13.7
    测试中的平均数值
G Skill Intl F4-2666C15-8GVK 8GB 需要考虑的原因
G Skill Intl F4-2666C15-8GVK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 104
    左右 -395% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-2666C15-8GVK 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 21
  • 读取速度，GB/s
    3,192.0 left arrow 18.5
  • 写入速度，GB/s
    2,404.5 left arrow 13.7
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    786 left arrow 3202

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

G Skill Intl F4-2666C15-8GVK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMU64GX4M4A2666C16 16GB
Corsair CMU64GX4M4A2666C16 16GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Essencore Limited IM48GU48N28-GGGHM 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
内存RAM
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
Crucial Technology CT16G4SFD824A.C16FBD 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
Crucial Technology CT8G4SFRA32A.M8FR 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3000C15-4GRK 4GB
G Skill Intl F4-3000C15-4GRK 4GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMW32GX4M2A2666C16 16GB
Corsair CMW32GX4M2A2666C16 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Kingston KHX2133C15S4/8G 8GB
Kingston KHX2133C15S4/8G 8GB
内存RAM
Mushkin 991679ES 996679ES 2GB
Mushkin 991679ES 996679ES 2GB
SK Hynix HMA81GU6JJR8N-VK 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
V-Color Technology Inc. TA48G30S815GK 8GB
V-Color Technology Inc. TA48G30S815GK 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Corsair CMV4GX4M1A2133C15 4GB
Corsair CMV4GX4M1A2133C15 4GB
内存RAM