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Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
比较
Samsung M395T2863QZ4-CF76 1GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
总分
Samsung M395T2863QZ4-CF76 1GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
更快的读取速度,GB/s
3
13.8
测试中的平均数值
更快的写入速度,GB/s
2,404.5
11.0
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
104
左右 -259% 更低的延时
更高的内存带宽,mbps
17000
6400
左右 2.66 更高的带宽
规格
完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
104
29
读取速度,GB/s
3,192.0
13.8
写入速度,GB/s
2,404.5
11.0
内存带宽,mbps
6400
17000
Other
描述
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
no data
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
786
2690
Samsung M395T2863QZ4-CF76 1GB RAM的比较
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB RAM的比较
Samsung M323R2GA3BB0-CQKOD 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Corsair CMK16GX4M2F4500C19 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6JJR8N
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Crucial Technology CT16G4DFD8266.M16FJ 16GB
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Corsair CMK32GX4M4A2400C12 8GB
Kingston 9905458-017.A01LF 4GB
Essencore Limited IM48GU48N28-GGGHM 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Mushkin 99[2/7/4]208F 8GB
报告一个错误
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