Samsung M395T2863QZ4-CF76 1GB vs Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 13.5

测试中的平均数值

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

需要考虑的原因
Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

报告一个错误

低于PassMark测试中的延时，ns

81 104

左右 -28% 更低的延时
更快的写入速度，GB/s

7.0 2,404.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Kingmax Semiconductor GLLG42F-D8KCIA------ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 81
读取速度，GB/s

3,192.0 13.5
写入速度，GB/s

2,404.5 7.0
内存带宽，mbps

6400 19200

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

786 1523

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Apacer Technology 78.B1GS6.AUC0B 4GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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Apacer Technology 78.C2GFA.AF30B 8GB

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Apacer Technology 78.B1GM3.AF00B 4GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston 99U5403-083.A00LF 8GB

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G Skill Intl F4-4400C19-16GTZR 16GB

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Patriot Memory (PDP Systems) 4000 C20 Series 8GB

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Samsung M378B5273CH0-CH9 4GB

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