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Samsung M395T2863QZ4-CF76 1GB
Kingston 9905622-025.A01G 4GB

Samsung M395T2863QZ4-CF76 1GB vs Kingston 9905622-025.A01G 4GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Kingston 9905622-025.A01G 4GB

Kingston 9905622-025.A01G 4GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 11.3
    测试中的平均数值
Kingston 9905622-025.A01G 4GB 需要考虑的原因
Kingston 9905622-025.A01G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 104
    左右 -316% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905622-025.A01G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 25
  • 读取速度，GB/s
    3,192.0 left arrow 15.3
  • 写入速度，GB/s
    2,404.5 left arrow 11.3
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    786 left arrow 2515

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Kingston 9905622-025.A01G 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation HU564404EP0200 4GB
Unifosa Corporation HU564404EP0200 4GB
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Samsung M471A5244CB0-CTD 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905622-025.A01G 4GB
Kingston 9905622-025.A01G 4GB
内存RAM
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内存RAM
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Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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内存RAM
Samsung M378B5673FH0-CH9 2GB
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内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
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内存RAM
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内存RAM
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Kingston HX316C10F/8 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM