Samsung M395T2863QZ4-CF76 1GB vs Kingston 9905744-076.A00G 16GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Kingston 9905744-076.A00G 16GB

Kingston 9905744-076.A00G 16GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 11.5

测试中的平均数值

Kingston 9905744-076.A00G 16GB

需要考虑的原因
Kingston 9905744-076.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

47 104

左右 -121% 更低的延时
更快的写入速度，GB/s

8.4 2,404.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Kingston 9905744-076.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 47
读取速度，GB/s

3,192.0 11.5
写入速度，GB/s

2,404.5 8.4
内存带宽，mbps

6400 21300

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

no data 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

786 1943

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Corsair CMK16GX4M2C3000C15 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Samsung M3 78T2863QZS-CF7 1GB

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Kingston M378A1K43CB2-CRC 8GB

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Golden Empire CL18-20-20 D4-3000 8GB

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Samsung M3 93T5750CZA-CE6 2GB

SK Hynix HMA81GU6DJR8N-WM 8GB

SK Hynix HMA81GU6DJR8N-WM 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Crucial Technology BL4G24C16U4B.8FE 4GB

Crucial Technology BL4G24C16U4B.8FE 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Kingston ACR32D4S2S1ME-8 8GB

Kingston ACR32D4S2S1ME-8 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

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Golden Empire CL16-20-20 D4-3200 16GB