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Samsung M395T2863QZ4-CF76 1GB
Kingston XN205T-MIE 16GB

Samsung M395T2863QZ4-CF76 1GB vs Kingston XN205T-MIE 16GB

总分
star star star star star
Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分
star star star star star
Kingston XN205T-MIE 16GB

Kingston XN205T-MIE 16GB

差异 规格 评论

差异

Samsung M395T2863QZ4-CF76 1GB 需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,404.5 left arrow 15.0
    测试中的平均数值
Kingston XN205T-MIE 16GB 需要考虑的原因
Kingston XN205T-MIE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 104
    左右 -235% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Kingston XN205T-MIE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    104 left arrow 31
  • 读取速度，GB/s
    3,192.0 left arrow 16.9
  • 写入速度，GB/s
    2,404.5 left arrow 15.0
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    786 left arrow 3522

Samsung M395T2863QZ4-CF76 1GB RAM的比较

takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB

Kingston XN205T-MIE 16GB RAM的比较

Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M471B5173QH0-YK0 4GB
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内存RAM
Elpida EBJ41UF8BDU5-GN-F 4GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Micron Technology 9ASF1G72PZ-2G3B1 8GB
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内存RAM
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Kingston 99U5474-022.A00LF 2GB
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内存RAM
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Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
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内存RAM
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内存RAM
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Corsair CMW32GX4M4A2666C16 8GB
内存RAM
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A-DATA Technology VDQVE1B16 2GB
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