Samsung M395T2863QZ4-CF76 1GB vs Samsung M471A1G44AB0-CWE 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 15.3

测试中的平均数值
更快的写入速度，GB/s

2,404.5 10.9

测试中的平均数值

Samsung M471A1G44AB0-CWE 8GB

需要考虑的原因
Samsung M471A1G44AB0-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

50 104

左右 -108% 更低的延时
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Samsung M471A1G44AB0-CWE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 50
读取速度，GB/s

3,192.0 15.3
写入速度，GB/s

2,404.5 10.9
内存带宽，mbps

6400 25600

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

786 2512

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Corsair CM4X16GE2133C15S2 16GB

Corsair CM4X16GE2133C15S2 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Kingston KHX3200C18D4/4G 4GB

Kingston KHX3200C18D4/4G 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905734-003.A00G 32GB

Kingston 9905734-003.A00G 32GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Corsair CMH32GX4M4E3200C16 8GB

Corsair CMH32GX4M4E3200C16 8GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

Micron Technology 8KTF51264HZ-1G6E1 4GB

Corsair CMWX8GD3000C16W4D 8GB

Corsair CMWX8GD3000C16W4D 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Kingston KHX2400C14S4/8G 8GB

Kingston KHX2400C14S4/8G 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

A-DATA Technology DDR4 3600 2OZ 8GB

A-DATA Technology DDR4 3600 2OZ 8GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Crucial Technology CT16G4DFD8266.M16FE 16GB

Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Kingston 9905630-048.A00G 16GB

Kingston 9905630-048.A00G 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CMW16GX4M2A2666C16 8GB

Corsair CMW16GX4M2A2666C16 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Patriot Memory (PDP Systems) PSD44G240041 4GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

Micron Technology 8ATF1G64AZ-3G2E1 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Corsair CMW64GX4M8Z2933C16 8GB

Corsair CMW64GX4M8Z2933C16 8GB