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Samsung M395T2863QZ4-CF76 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
比较
Samsung M395T2863QZ4-CF76 1GB vs Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
总分
Samsung M395T2863QZ4-CF76 1GB
总分
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
更快的读取速度,GB/s
3
14.7
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
报告一个错误
低于PassMark测试中的延时,ns
66
104
左右 -58% 更低的延时
更快的写入速度,GB/s
7.3
2,404.5
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
104
66
读取速度,GB/s
3,192.0
14.7
写入速度,GB/s
2,404.5
7.3
内存带宽,mbps
6400
19200
Other
描述
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
786
1699
Samsung M395T2863QZ4-CF76 1GB RAM的比较
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMK128GX4M4A2666C16 32GB
Samsung M471A2K43EB1-CWE 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Corsair VSA2GSDS667C4 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3600C19-8GSXW 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
DSL Memory D4SS1G081SH24A-A 8GB
G Skill Intl F4-4000C14-16GTZR 16GB
Corsair CMN32GX4M2Z3200C16 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Samsung V-GeN D4S8GL32A8TL 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2800C15-8GRK 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
INTENSO 4GB
Samsung M471A2K43EB1-CWE 16GB
Crucial Technology CB16GS2666.C8ET 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Crucial Technology CT8G4DFS832A.C8FE 8GB
Corsair CMK32GX4M2D3600C18 16GB
Corsair CMK32GX4M2Z3600C18 16GB
AMD R748G2133U2S 8GB
Patriot Memory (PDP Systems) PSD48G240082 8GB
Micron Technology 16HTF25664HY-800G1 2GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
报告一个错误
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Bug description
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