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Samsung M395T2953CZ4-CE61 1GB
G Skill Intl F4-4266C17-8GTZRB 8GB

Samsung M395T2953CZ4-CE61 1GB vs G Skill Intl F4-4266C17-8GTZRB 8GB

总分
star star star star star
Samsung M395T2953CZ4-CE61 1GB

Samsung M395T2953CZ4-CE61 1GB

总分
star star star star star
G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB

差异 规格 评论

差异

Samsung M395T2953CZ4-CE61 1GB 需要考虑的原因
Samsung M395T2953CZ4-CE61 1GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 18.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,177.1 left arrow 16.3
    测试中的平均数值
G Skill Intl F4-4266C17-8GTZRB 8GB 需要考虑的原因
G Skill Intl F4-4266C17-8GTZRB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 69
    左右 -176% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M395T2953CZ4-CE61 1GB
G Skill Intl F4-4266C17-8GTZRB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 25
  • 读取速度，GB/s
    2,868.9 left arrow 18.3
  • 写入速度，GB/s
    2,177.1 left arrow 16.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    684 left arrow 3849

Samsung M395T2953CZ4-CE61 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB

G Skill Intl F4-4266C17-8GTZRB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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