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Samsung M395T5160QZ4-CE66 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB

Samsung M395T5160QZ4-CE66 2GB vs Chun Well Technology Holding Limited D4U0832160B 8GB

总分
star star star star star
Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分
star star star star star
Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

差异 规格 评论

差异

Samsung M395T5160QZ4-CE66 2GB 需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB
报告一个错误
  • 更快的写入速度，GB/s
    2,072.7 left arrow 14.5
    测试中的平均数值
Chun Well Technology Holding Limited D4U0832160B 8GB 需要考虑的原因
Chun Well Technology Holding Limited D4U0832160B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 75
    左右 -134% 更低的延时
  • 更快的读取速度，GB/s
    20.5 left arrow 2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M395T5160QZ4-CE66 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 32
  • 读取速度，GB/s
    2,730.3 left arrow 20.5
  • 写入速度，GB/s
    2,072.7 left arrow 14.5
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    858 left arrow 3379

Samsung M395T5160QZ4-CE66 2GB RAM的比较

Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB

Chun Well Technology Holding Limited D4U0832160B 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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