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Samsung M395T5160QZ4-CE66 2GB
Corsair CMT16GX4M2C3466C16 8GB

Samsung M395T5160QZ4-CE66 2GB vs Corsair CMT16GX4M2C3466C16 8GB

总分
star star star star star
Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分
star star star star star
Corsair CMT16GX4M2C3466C16 8GB

Corsair CMT16GX4M2C3466C16 8GB

差异 规格 评论

差异

Samsung M395T5160QZ4-CE66 2GB 需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,072.7 left arrow 14.3
    测试中的平均数值
Corsair CMT16GX4M2C3466C16 8GB 需要考虑的原因
Corsair CMT16GX4M2C3466C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 75
    左右 -275% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M395T5160QZ4-CE66 2GB
Corsair CMT16GX4M2C3466C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 20
  • 读取速度，GB/s
    2,730.3 left arrow 17.1
  • 写入速度，GB/s
    2,072.7 left arrow 14.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    no data left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    858 left arrow 3088

Samsung M395T5160QZ4-CE66 2GB RAM的比较

Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB

Corsair CMT16GX4M2C3466C16 8GB RAM的比较

Crucial Technology BLS8G4D240FSC.16FBD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F4-4000C14-16GTZR 16GB
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AMD R538G1601U2S-UO 8GB
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内存RAM
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SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
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内存RAM
Corsair CMK16GX4M2E3200C16 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
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A-DATA Technology ADOVE1A0834E 1GB
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G Skill Intl F4-2400C15-8GVR 8GB
内存RAM
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Nanya Technology M2N1G64TUH8D5F-AC 1GB
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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
内存RAM