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Samsung M395T5160QZ4-CE66 2GB
Corsair CMW8GX4M1Z3600C18 8GB

Samsung M395T5160QZ4-CE66 2GB vs Corsair CMW8GX4M1Z3600C18 8GB

总分
star star star star star
Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分
star star star star star
Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMW8GX4M1Z3600C18 8GB

差异 规格 评论

差异

Samsung M395T5160QZ4-CE66 2GB 需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB
报告一个错误
  • 更快的写入速度，GB/s
    2,072.7 left arrow 16.1
    测试中的平均数值
Corsair CMW8GX4M1Z3600C18 8GB 需要考虑的原因
Corsair CMW8GX4M1Z3600C18 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 75
    左右 -159% 更低的延时
  • 更快的读取速度，GB/s
    20.6 left arrow 2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M395T5160QZ4-CE66 2GB
Corsair CMW8GX4M1Z3600C18 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    75 left arrow 29
  • 读取速度，GB/s
    2,730.3 left arrow 20.6
  • 写入速度，GB/s
    2,072.7 left arrow 16.1
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    no data left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    858 left arrow 3639

Samsung M395T5160QZ4-CE66 2GB RAM的比较

Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB

Corsair CMW8GX4M1Z3600C18 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-155.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
DSL Memory CIR-W4SUSS2408G 8GB
DSL Memory CIR-W4SUSS2408G 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CM4X8GF2666Z16K4 8GB
Corsair CM4X8GF2666Z16K4 8GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Crucial Technology BL8G32C16U4W.8FE 8GB
Crucial Technology BL8G32C16U4W.8FE 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
G Skill Intl F4-3000C15-4GVSB 4GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Kingston 9905624-046.A00G 8GB
Kingston 9905624-046.A00G 8GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Kingston 9905678-121.A00G 8GB
Kingston 9905678-121.A00G 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N-VK 32GB
Hynix Semiconductor (Hyundai Electronics) HMAA4GU6AJR8N
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3466C16-8GTZKW 8GB
G Skill Intl F4-3466C16-8GTZKW 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-3200C14-8GTZR 8GB
G Skill Intl F4-3200C14-8GTZR 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Corsair CMU32GX4M2A2400C14 16GB
Corsair CMU32GX4M2A2400C14 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
A-DATA Technology AO1P24HCST2-BSCS 16GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
Samsung M393A2K40BB2-CTD 16GB
Samsung M393A2K40BB2-CTD 16GB
内存RAM