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Samsung M395T5160QZ4-CE66 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
比较
Samsung M395T5160QZ4-CE66 2GB vs Micron Technology 4ATF51264AZ-3G2E1 4GB
总分
Samsung M395T5160QZ4-CE66 2GB
总分
Micron Technology 4ATF51264AZ-3G2E1 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB
报告一个错误
更快的读取速度,GB/s
2
17.5
测试中的平均数值
需要考虑的原因
Micron Technology 4ATF51264AZ-3G2E1 4GB
报告一个错误
低于PassMark测试中的延时,ns
48
75
左右 -56% 更低的延时
更快的写入速度,GB/s
8.3
2,072.7
测试中的平均数值
更高的内存带宽,mbps
25600
5300
左右 4.83 更高的带宽
规格
完整的技术规格清单
Samsung M395T5160QZ4-CE66 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
75
48
读取速度,GB/s
2,730.3
17.5
写入速度,GB/s
2,072.7
8.3
内存带宽,mbps
5300
25600
Other
描述
PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
no data
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
858
2196
Samsung M395T5160QZ4-CE66 2GB RAM的比较
Samsung M395T5160QZ4-CE65 2GB
Apacer Technology GD2.1831WS.002 16GB
Micron Technology 4ATF51264AZ-3G2E1 4GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Team Group Inc. Team-Elite-1333 4GB
Corsair CMR32GX4M4C3200C16 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Kingston 9905701-132.A00G 16GB
Nanya Technology NT4GC64B88B0NF-DI 4GB
Nanya Technology NT2GC64B88B0NS-CG 2GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology ILG8GS2400A 8GB
Kingston 9905403-038.A00G 4GB
Corsair CMD32GX4M4B3000C15 8GB
Samsung M386B4G70DM0-CMA4 32GB
AMD R948G2806U2S 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMK16GX4M4A2400C16 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMV8GX4M1A2666C18 8GB
Kingston 99U5474-010.A00LF 2GB
Corsair CMV8GX4M1A2666C18 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) PSD48G240081 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT16G4DFRA266.C8FB 16GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Kingston HP32D4U8S8ME-8X 8GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMSX64GX4M4A2666C18 16GB
报告一个错误
×
Bug description
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