Samsung M395T5160QZ4-CE66 2GB vs Patriot Memory (PDP Systems) 3000 C16 Series 4GB

总分

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

差异规格评论

差异

Samsung M395T5160QZ4-CE66 2GB

需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB

报告一个错误

更快的读取速度，GB/s

2 16.9

测试中的平均数值
更快的写入速度，GB/s

2,072.7 13.1

测试中的平均数值

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 3000 C16 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

32 75

左右 -134% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M395T5160QZ4-CE66 2GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 32
读取速度，GB/s

2,730.3 16.9
写入速度，GB/s

2,072.7 13.1
内存带宽，mbps

5300 17000

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

858 3222

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT51264AC800.C16FC 4GB

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Kingston KHX2933C17S4/8G 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Corsair CMK32GX4M4D3600C18 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB

Wilk Elektronik S.A. GY2400D464L15S/8G 8GB