Samsung M4 70T2864QZ3-CE6 1GB vs Mushkin MES4S213FF16G28 16GB

总分

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分

Mushkin MES4S213FF16G28 16GB

Mushkin MES4S213FF16G28 16GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 13.8

测试中的平均数值

Mushkin MES4S213FF16G28 16GB

需要考虑的原因
Mushkin MES4S213FF16G28 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 65

左右 -81% 更低的延时
更快的写入速度，GB/s

11.2 1,574.4

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CE6 1GB

Mushkin MES4S213FF16G28 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 36
读取速度，GB/s

3,858.9 13.8
写入速度，GB/s

1,574.4 11.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

607 2550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905403-061.A00LF 2GB

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Crucial Technology CT8G4SFD824A.C16FADP 8GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Crucial Technology CT16G4DFD8213.C16FH1 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix GKE800SO102408-2400 8GB

SK Hynix GKE800SO102408-2400 8GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Kingston KHX2666C15D4/4G 4GB

Kingston KHX2666C15D4/4G 4GB