RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M4 70T2864QZ3-CE6 1GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

Samsung M4 70T2864QZ3-CE6 1GB vs Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

总分
star star star star star
Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分
star star star star star
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.4
    测试中的平均数值
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 65
    左右 -195% 更低的延时
  • 更快的写入速度，GB/s
    12.8 left arrow 1,574.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CE6 1GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 22
  • 读取速度，GB/s
    3,858.9 left arrow 17.4
  • 写入速度，GB/s
    1,574.4 left arrow 12.8
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    607 left arrow 2801

Samsung M4 70T2864QZ3-CE6 1GB RAM的比较

Samsung M4 70T2864QZ3-CF7 1GB
Kingston KVR800D2S6/4G 4GB

Wilk Elektronik S.A. GR2400D464L17S/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK8GX4M1A2666C16 8GB
Corsair CMK8GX4M1A2666C16 8GB
内存RAM
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Corsair CMR64GX4M4C3000C15 16GB
Corsair CMR64GX4M4C3000C15 16GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
G Skill Intl F4-2133C15-8GFX 8GB
G Skill Intl F4-2133C15-8GFX 8GB
内存RAM
Samsung M4 70T2864QZ3-CE6 1GB
Samsung M4 70T2864QZ3-CE6 1GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
V-Color Technology Inc. TN416G26D819-SB 16GB
V-Color Technology Inc. TN416G26D819-SB 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C14-16GVK 16GB
G Skill Intl F4-3200C14-16GVK 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CM4X8GF2666C16K4 8GB
Corsair CM4X8GF2666C16K4 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Corsair CMD32GX4M2B3466C16 16GB
Corsair CMD32GX4M2B3466C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
G Skill Intl F4-3200C15-16GVR 16GB
G Skill Intl F4-3200C15-16GVR 16GB
内存RAM