Samsung M4 70T2864QZ3-CF7 1GB vs A-DATA Technology AM2P26KC8T1-BXRS 8GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

A-DATA Technology AM2P26KC8T1-BXRS 8GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.9

测试中的平均数值
更快的写入速度，GB/s

2,201.1 10.7

测试中的平均数值

A-DATA Technology AM2P26KC8T1-BXRS 8GB

需要考虑的原因
A-DATA Technology AM2P26KC8T1-BXRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 74

左右 -155% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

A-DATA Technology AM2P26KC8T1-BXRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 29
读取速度，GB/s

4,178.4 14.9
写入速度，GB/s

2,201.1 10.7
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

508 2811

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9965525-140.A00LF 8GB

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Netac Technology Co Ltd EKBLUE4162417AD 8GB

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Kingston 9905458-017.A01LF 4GB

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Corsair CMT32GX4M2C3000C15 16GB

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Corsair CMW32GX4M2C3200C16 16GB

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Kingston 9905403-061.A00LF 2GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Unifosa Corporation HU564404EP0200 4GB

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Crucial Technology BLS16G4D30AESC.M16FE 16GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Kingston 9905744-035.A00G 16GB

Kingston 9905744-035.A00G 16GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT32G4DFD832A.M16FB 32GB

Crucial Technology CT32G4DFD832A.M16FB 32GB