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Samsung M4 70T2864QZ3-CF7 1GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB

Samsung M4 70T2864QZ3-CF7 1GB vs A-DATA Technology AO1P24HC8T1-BQXS 8GB

总分
star star star star star
Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
A-DATA Technology AO1P24HC8T1-BQXS 8GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 13.3
    测试中的平均数值
A-DATA Technology AO1P24HC8T1-BQXS 8GB 需要考虑的原因
A-DATA Technology AO1P24HC8T1-BQXS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 74
    左右 -85% 更低的延时
  • 更快的写入速度，GB/s
    8.9 left arrow 2,201.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
A-DATA Technology AO1P24HC8T1-BQXS 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 40
  • 读取速度，GB/s
    4,178.4 left arrow 13.3
  • 写入速度，GB/s
    2,201.1 left arrow 8.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    508 left arrow 2204

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

A-DATA Technology AO1P24HC8T1-BQXS 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B5170FH0-CK0 4GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Asgard VML41UG-MIC1U22T1 8GB
Asgard VML41UG-MIC1U22T1 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-3000C14-16GTZR 16GB
G Skill Intl F4-3000C14-16GTZR 16GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
Corsair CMG64GX4M2D3600C18 32GB
Corsair CMG64GX4M2D3600C18 32GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
Crucial Technology BLS4G4S240FSD.M8FADM 4GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
OCMEMORY OCM3200CL16D-16GBN 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
Patriot Memory (PDP Systems) 2400 C14 Series 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
内存RAM
Kingston KHX1600C10D3/8GXF 8GB
Kingston KHX1600C10D3/8GXF 8GB
G Skill Intl F4-3000C16-8GTRG 8GB
G Skill Intl F4-3000C16-8GTRG 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
内存RAM
Kingston ACR16D3LU1KBG/4G 4GB
Kingston ACR16D3LU1KBG/4G 4GB
Kingston KF3600C16D4/16GX 16GB
Kingston KF3600C16D4/16GX 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
SK Hynix HMA851S6AFR6N-UH 4GB
SK Hynix HMA851S6AFR6N-UH 4GB
内存RAM