Samsung M4 70T2864QZ3-CF7 1GB vs Corsair CMK128GX4M8B3000C16 16GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Corsair CMK128GX4M8B3000C16 16GB

Corsair CMK128GX4M8B3000C16 16GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 13.4

测试中的平均数值
更快的写入速度，GB/s

2,201.1 11.9

测试中的平均数值

Corsair CMK128GX4M8B3000C16 16GB

需要考虑的原因
Corsair CMK128GX4M8B3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

40 74

左右 -85% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMK128GX4M8B3000C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 40
读取速度，GB/s

4,178.4 13.4
写入速度，GB/s

2,201.1 11.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

508 3014

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-3000C14-16GVKD 16GB

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Crucial Technology 16G4UD2400.C16BD1 16GB

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Hyundai Inc GR26C16S8K2HU416 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Crucial Technology CT32G4DFD832A.M16FB 32GB

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Kingston 9905713-004.A00G 4GB

Kingston 9905713-004.A00G 4GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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A-DATA Technology AO1P21FC8T1-BSKS 8GB

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G Skill Intl F5-5600J4040C16G 16GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB