Samsung M4 70T2864QZ3-CF7 1GB vs Corsair CMK32GX4M1A2400C16 32GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Corsair CMK32GX4M1A2400C16 32GB

Corsair CMK32GX4M1A2400C16 32GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 15.8

测试中的平均数值

Corsair CMK32GX4M1A2400C16 32GB

需要考虑的原因
Corsair CMK32GX4M1A2400C16 32GB

报告一个错误

低于PassMark测试中的延时，ns

23 74

左右 -222% 更低的延时
更快的写入速度，GB/s

7.9 2,201.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Corsair CMK32GX4M1A2400C16 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 23
读取速度，GB/s

4,178.4 15.8
写入速度，GB/s

2,201.1 7.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

508 2684

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.C1GQ5.C7C0B 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Corsair CMK32GX4M1A2400C16 32GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Crucial Technology BL16G36C16U4B.M8FB1 16GB

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Kingston 9905713-004.A00G 4GB

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