Samsung M4 70T2864QZ3-CF7 1GB vs Crucial Technology CT4G4SFS824A.C8FE 4GB

总分

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分

Crucial Technology CT4G4SFS824A.C8FE 4GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.7

测试中的平均数值

Crucial Technology CT4G4SFS824A.C8FE 4GB

需要考虑的原因
Crucial Technology CT4G4SFS824A.C8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 74

左右 -164% 更低的延时
更快的写入速度，GB/s

7.0 2,201.1

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

74 28
读取速度，GB/s

4,178.4 14.7
写入速度，GB/s

2,201.1 7.0
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

508 1728

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3866C18-8GTZKW 8GB

G Skill Intl F4-3866C18-8GTZKW 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Kingston 9965662-018.A00G 32GB

Kingston 9965662-018.A00G 32GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

SK Hynix HMT351S6AFR8C-H9 4GB

SK Hynix HMT351S6AFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

G Skill Intl F4-4133C19-8GTZC 8GB

G Skill Intl F4-4133C19-8GTZC 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

SK Hynix HMA41GR7AFR8N-UH 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Corsair CM4X16GC3000C15K4 16GB

Corsair CM4X16GC3000C15K4 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston KY7N41-MID 8GB

Kingston KY7N41-MID 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

SK Hynix HMA82GS6AFR8N-UH 16GB

SK Hynix HMA82GS6AFR8N-UH 16GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-2133C15-16GFXR 16GB

G Skill Intl F4-2133C15-16GFXR 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GU6AFR8N