Samsung M4 70T2953EZ3-CE6 1GB vs Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 22.8

测试中的平均数值

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

需要考虑的原因
Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 73

左右 -152% 更低的延时
更快的写入速度，GB/s

16.9 1,423.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Chun Well Technology Holding Limited ND4U0840180BRPDE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 29
读取速度，GB/s

3,510.5 22.8
写入速度，GB/s

1,423.3 16.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

476 3792

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

0 ns

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