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Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology 16G4UD2400.C16BD1 16GB
比较
Samsung M4 70T2953EZ3-CE6 1GB vs Crucial Technology 16G4UD2400.C16BD1 16GB
总分
Samsung M4 70T2953EZ3-CE6 1GB
总分
Crucial Technology 16G4UD2400.C16BD1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
更快的读取速度,GB/s
3
15.5
测试中的平均数值
需要考虑的原因
Crucial Technology 16G4UD2400.C16BD1 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
73
左右 -204% 更低的延时
更快的写入速度,GB/s
10.4
1,423.3
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology 16G4UD2400.C16BD1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
73
24
读取速度,GB/s
3,510.5
15.5
写入速度,GB/s
1,423.3
10.4
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
476
2654
Samsung M4 70T2953EZ3-CE6 1GB RAM的比较
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Crucial Technology 16G4UD2400.C16BD1 16GB RAM的比较
Corsair CM5S16GM4800A40K2 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CML8GX3M2A1600C9 4GB
SK Hynix HMAA4GU6AJR8N-VK 32GB
Corsair CMX4GX3M2A1600C9 2GB
Asgard VMA44UG-MEC1U2AW1 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
G Skill Intl F4-3600C19-16GSXKB 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMSX8GX4M2A2666C18 4GB
Kingston 99U5428-046.A00LF 4GB
Crucial Technology CT16G4SFD8266.C16FN 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905701-143.A00G 16GB
Asgard VMA45UG-MEC1U2AW1 8GB
Apacer Technology 78.BAGP4.AR50C 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Panram International Corporation PUD42400C154G4NJK 4GB
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology CT16G4DFD8213.16FDD1 16GB
Samsung M378B5273CH0-CH9 4GB
Dust Leopard DDR4-2400 C16 8GB 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix HMA41GU6AFR8N-TF 8GB
Samsung M3 78T5663RZ3-CF7 2GB
Mushkin MR[A/B]4U266GHHF8G 8GB
报告一个错误
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Bug description
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