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Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Samsung M4 70T2953EZ3-CE6 1GB vs Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 22.2
    测试中的平均数值
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB 需要考虑的原因
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 73
    左右 -143% 更低的延时
  • 更快的写入速度，GB/s
    17.1 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 5300
    左右 4.83 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 30
  • 读取速度，GB/s
    3,510.5 left arrow 22.2
  • 写入速度，GB/s
    1,423.3 left arrow 17.1
  • 内存带宽，mbps
    5300 left arrow 25600
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    476 left arrow 3871

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Crucial Technology CT16G4DFRA32A.M16FJ1 16GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
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Kingston 99U5469-045.A00LF 4GB
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Kingston 9905403-174.A00LF 2GB
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内存RAM
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内存RAM
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G Skill Intl F4-3600C18-32GTRG 32GB
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Samsung M378B5273CH0-CH9 4GB
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Corsair CMK32GX4M1D3000C16 32GB
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