Samsung M4 70T2953EZ3-CE6 1GB vs Crucial Technology CT8G4SFS824A.M8FA 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Crucial Technology CT8G4SFS824A.M8FA 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 13.7

测试中的平均数值

Crucial Technology CT8G4SFS824A.M8FA 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.M8FA 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 73

左右 -204% 更低的延时
更快的写入速度，GB/s

6.5 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 24
读取速度，GB/s

3,510.5 13.7
写入速度，GB/s

1,423.3 6.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 2052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CMX4GX3M2A1600C9 2GB

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Samsung M393B2G70BH0-CH9 16GB

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Crucial Technology CT8G4SFS832A.C8FE 8GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-2400C16-4GRS 4GB

G Skill Intl F4-2400C16-4GRS 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMD128GX4M8A2400C14 16GB