Samsung M4 70T2953EZ3-CE6 1GB vs Essencore Limited KD4AGU880-34A170X 16GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Essencore Limited KD4AGU880-34A170X 16GB

Essencore Limited KD4AGU880-34A170X 16GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 19.2

测试中的平均数值

Essencore Limited KD4AGU880-34A170X 16GB

需要考虑的原因
Essencore Limited KD4AGU880-34A170X 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 73

左右 -232% 更低的延时
更快的写入速度，GB/s

15.8 1,423.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Essencore Limited KD4AGU880-34A170X 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 22
读取速度，GB/s

3,510.5 19.2
写入速度，GB/s

1,423.3 15.8
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

476 3622

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited KD48GU88C-26N1600 8GB

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Kingston KF560C40-16 16GB

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Crucial Technology CT16G4SFD824A.M16FE 16GB

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Crucial Technology BLT2G3D1608DT1TX0 2GB

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Teikon TMA851U6CJR6N-VKSC 4GB

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Corsair CMK128GX4M8X3800C19 16GB

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Kingston HP698651-154-MCN 8GB

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Crucial Technology BL8G32C16U4RL.M8FE1 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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Kingston KVR16N11/8-SP 8GB

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Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

Kingston KHX1866C10D3/8GX 8GB

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Kingston 99U5429-007.A00LF 2GB

Kingston 99U5429-007.A00LF 2GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Micron Technology 9ASF1G72PZ-2G3B1 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB