Samsung M4 70T2953EZ3-CE6 1GB vs G Skill Intl F4-3000C14-16GVR 16GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

G Skill Intl F4-3000C14-16GVR 16GB

G Skill Intl F4-3000C14-16GVR 16GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 16.2

测试中的平均数值

G Skill Intl F4-3000C14-16GVR 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GVR 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 73

左右 -109% 更低的延时
更快的写入速度，GB/s

12.8 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-3000C14-16GVR 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 35
读取速度，GB/s

3,510.5 16.2
写入速度，GB/s

1,423.3 12.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 3246

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Peak Electronics 256X64M-67E 2GB

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G Skill Intl F4-3200C15-4GRKD 4GB

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Patriot Memory (PDP Systems) PSD38G13332 8GB

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Samsung M393B2G70BH0-YK0 16GB

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Kingston XCCT36-MIE 16GB

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Apacer Technology 78.CAGPW.40C0B 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Kingston 9965433-034.A00LF 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingston XW21KG-MIE-NX 8GB

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Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Mushkin MR[ABC]4U320GJJM8G 8GB

Mushkin MR[ABC]4U320GJJM8G 8GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

G Skill Intl F4-4600C19-8GTZKKC 8GB

G Skill Intl F4-4600C19-8GTZKKC 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

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Corsair CMD32GX4M4A2400C12 8GB

Corsair CMD32GX4M4A2400C12 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-5066C20-8GVK 8GB

G Skill Intl F4-5066C20-8GVK 8GB