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Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C16-16GTZN 16GB

Samsung M4 70T2953EZ3-CE6 1GB vs G Skill Intl F4-3200C16-16GTZN 16GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZN 16GB

G Skill Intl F4-3200C16-16GTZN 16GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.8
    测试中的平均数值
G Skill Intl F4-3200C16-16GTZN 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZN 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 73
    左右 -143% 更低的延时
  • 更快的写入速度，GB/s
    14.3 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C16-16GTZN 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 30
  • 读取速度，GB/s
    3,510.5 left arrow 17.8
  • 写入速度，GB/s
    1,423.3 left arrow 14.3
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    476 left arrow 3568

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

G Skill Intl F4-3200C16-16GTZN 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C16-16GTZN 16GB
G Skill Intl F4-3200C16-16GTZN 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
A-DATA Technology AO1P24HC8T1-BPGS 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
Kingston HX424C15FB/8 8GB
Kingston HX424C15FB/8 8GB
内存RAM
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Crucial Technology CT8G4SFS8266.C8FD1 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
Smart Modular SF4641G8CK8IEHLSBG 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905625-152.A00G 16GB
Kingston 9905625-152.A00G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Avant Technology W6451U48J7240N6 4GB
Avant Technology W6451U48J7240N6 4GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3733C17-8GTZKK 8GB
G Skill Intl F4-3733C17-8GTZKK 8GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Kingston KHX3200C20S4/16GX 16GB
Kingston KHX3200C20S4/16GX 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
Crucial Technology CT16G4DFD832A.M16FR 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0CS 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Corsair CMW128GX4M8C3200C16 16GB
Corsair CMW128GX4M8C3200C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX3466C16D4/16GX 16GB
Kingston KHX3466C16D4/16GX 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
内存RAM
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Kingston LV32D4U2S8HD-8X 8GB
Kingston LV32D4U2S8HD-8X 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
内存RAM