Samsung M4 70T2953EZ3-CE6 1GB vs G Skill Intl F4-4133C19-8GTZSWF 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

G Skill Intl F4-4133C19-8GTZSWF 8GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 18.5

测试中的平均数值

G Skill Intl F4-4133C19-8GTZSWF 8GB

需要考虑的原因
G Skill Intl F4-4133C19-8GTZSWF 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 73

左右 -204% 更低的延时
更快的写入速度，GB/s

17.2 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 24
读取速度，GB/s

3,510.5 18.5
写入速度，GB/s

1,423.3 17.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 4152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-3200C14-32GTRS 32GB

G Skill Intl F4-3200C14-32GTRS 32GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

V-GEN D4H8GL26A8TS6 8GB

V-GEN D4H8GL26A8TS6 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

Samsung M378B5273CH0-CK0 4GB

Samsung M378B5273CH0-CK0 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMA81GU6AFR8N-UH 8GB

SK Hynix HMA81GU6AFR8N-UH 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

Crucial Technology CT102464BF160B.C16 8GB

Crucial Technology CT102464BF160B.C16 8GB

Essencore Limited KD4AGU880-32A160T 16GB

Essencore Limited KD4AGU880-32A160T 16GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-4000C16-8GVK 8GB

G Skill Intl F4-4000C16-8GVK 8GB