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Samsung M378B5273CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB

Samsung M378B5273CH0-CH9 4GB vs Micron Technology 8ATF1G64HZ-2G3E2 8GB

总分
star star star star star
Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分
star star star star star
Micron Technology 8ATF1G64HZ-2G3E2 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB

差异 规格 评论

差异

Samsung M378B5273CH0-CH9 4GB 需要考虑的原因
Samsung M378B5273CH0-CH9 4GB
报告一个错误
Micron Technology 8ATF1G64HZ-2G3E2 8GB 需要考虑的原因
Micron Technology 8ATF1G64HZ-2G3E2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 37
    左右 -37% 更低的延时
  • 更快的读取速度，GB/s
    15.2 left arrow 13.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 27
  • 读取速度，GB/s
    13.2 left arrow 15.2
  • 写入速度，GB/s
    8.4 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 2537

Samsung M378B5273CH0-CH9 4GB RAM的比较

Ramaxel Technology RMR1870EC58E9F1333 4GB
Golden Empire CL15-15-15 D4-2133 8GB

Micron Technology 8ATF1G64HZ-2G3E2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CM4X4GF3000C15K4 4GB
Corsair CM4X4GF3000C15K4 4GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
Wilk Elektronik S.A. IRH2666D464L19/16G 16GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
Crucial Technology CT4G4DFS824A.M8FB 4GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
Crucial Technology BLS8G4D30AESCK.M8FE 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SK Hynix HMA82GU6DJR8N-VK 16GB
SK Hynix HMA82GU6DJR8N-VK 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
Wilk Elektronik S.A. GY2133D464L15S/4G 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
Transcend Information TS512MSH64V4H 4GB
Transcend Information TS512MSH64V4H 4GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-3200C16-4GTZB 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kllisre DDR4-8GB 8GB
Kllisre DDR4-8GB 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Good Wealth Technology Ltd. KETECH 8GB
Good Wealth Technology Ltd. KETECH 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Corsair CM4X4GF2400Z16K4 4GB
Corsair CM4X4GF2400Z16K4 4GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CRC 4GB
Samsung M378A5244CB0-CRC 4GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT16G4S24AM.M16FB 16GB
Crucial Technology CT16G4S24AM.M16FB 16GB
内存RAM