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Samsung M4 70T2953EZ3-CE6 1GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Samsung M4 70T2953EZ3-CE6 1GB vs Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.2
    测试中的平均数值
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 73
    左右 -181% 更低的延时
  • 更快的写入速度，GB/s
    12.7 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 26
  • 读取速度，GB/s
    3,510.5 left arrow 16.2
  • 写入速度，GB/s
    1,423.3 left arrow 12.7
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    476 left arrow 2728

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Hoodisk Electronics Co Ltd GKE800SO51216-2400 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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Samsung M4 70T2953EZ3-CE6 1GB
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内存RAM
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内存RAM
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