Samsung M4 70T2953EZ3-CE6 1GB vs Kingston 9965604-008.C00G 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Kingston 9965604-008.C00G 8GB

Kingston 9965604-008.C00G 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 11

测试中的平均数值

Kingston 9965604-008.C00G 8GB

需要考虑的原因
Kingston 9965604-008.C00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 73

左右 -55% 更低的延时
更快的写入速度，GB/s

8.9 1,423.3

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Kingston 9965604-008.C00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 47
读取速度，GB/s

3,510.5 11.0
写入速度，GB/s

1,423.3 8.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

476 2341

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS8213.C8FAD1 4GB

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G Skill Intl F4-3600C14-16GVKA 16GB

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SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Apacer Technology 78.B1GM3.C7W0B 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB

Kingston 9905469-124.A00LF 4GB

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Kingston 9905701-021.A00G 16GB

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AMD AE34G1601U1 4GB

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A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Samsung M378A1G43EB1-CRC 8GB

Samsung M378A1G43EB1-CRC 8GB