RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
比较
Samsung M4 70T2953EZ3-CE6 1GB vs Micron Technology 36ASF2G72PZ-2G6E1 16GB
总分
Samsung M4 70T2953EZ3-CE6 1GB
总分
Micron Technology 36ASF2G72PZ-2G6E1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
需要考虑的原因
Micron Technology 36ASF2G72PZ-2G6E1 16GB
报告一个错误
低于PassMark测试中的延时,ns
49
73
左右 -49% 更低的延时
更快的读取速度,GB/s
9.8
3
测试中的平均数值
更快的写入速度,GB/s
8.4
1,423.3
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
73
49
读取速度,GB/s
3,510.5
9.8
写入速度,GB/s
1,423.3
8.4
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
476
2277
Samsung M4 70T2953EZ3-CE6 1GB RAM的比较
Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KF552C40-16 16GB
G Skill Intl F4-4800C19-8GTESC 8GB
Samsung M391B5673EH1-CH9 2GB
Ramaxel Technology RMSA3270MB76H8F2400 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS8G4D26BFSEK.8FD 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Patriot Memory (PDP Systems) PSD44G240082 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3600C18-8GVK 8GB
ASint Technology SSA302G08-EGN1C 4GB
Nanya Technology M471A5143EB1-CRC 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 8ATF1G64AZ-3G2R1 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Micron Technology 4ATF1G64AZ-3G2E1 8GB
Crucial Technology BL16G32C16U4B.16FE 16GB
G Skill Intl F4-3200C16-4GVKB 4GB
A-DATA Technology VDQVE1B16 2GB
Kingston 9905630-063.A00G 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Apacer Technology 78.B1GET.AU00C 4GB
Carry Technology Co. Ltd. 4DCC3IOGE-MATP 8GB
Kingston 9965525-018.A00LF 4GB
Samsung M391A2K43BB1-CRC 16GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
报告一个错误
×
Bug description
Source link