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Samsung M4 70T2953EZ3-CE6 1GB
Smart Modular SMS4TDC8C1K0446FCG 8GB

Samsung M4 70T2953EZ3-CE6 1GB vs Smart Modular SMS4TDC8C1K0446FCG 8GB

总分
star star star star star
Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分
star star star star star
Smart Modular SMS4TDC8C1K0446FCG 8GB

Smart Modular SMS4TDC8C1K0446FCG 8GB

差异 规格 评论

差异

Samsung M4 70T2953EZ3-CE6 1GB 需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.9
    测试中的平均数值
Smart Modular SMS4TDC8C1K0446FCG 8GB 需要考虑的原因
Smart Modular SMS4TDC8C1K0446FCG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    43 left arrow 73
    左右 -70% 更低的延时
  • 更快的写入速度，GB/s
    8.1 left arrow 1,423.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2953EZ3-CE6 1GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    73 left arrow 43
  • 读取速度，GB/s
    3,510.5 left arrow 13.9
  • 写入速度，GB/s
    1,423.3 left arrow 8.1
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    476 left arrow 2058

Samsung M4 70T2953EZ3-CE6 1GB RAM的比较

Samsung M4 70T2864EH3-CF7 1GB
G Skill Intl F4-2400C15-4GRB 4GB

Smart Modular SMS4TDC8C1K0446FCG 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A2K43CB1-CRC 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
Crucial Technology CT8G4SFD824A.C16FHP 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Samsung F6451U64F9333G 4GB
Samsung F6451U64F9333G 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Apacer Technology 78.C1GS7.AUC0B 8GB
Apacer Technology 78.C1GS7.AUC0B 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
Mushkin MR[ABC]4U320GJJM8G 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Apacer Technology 78.CAGP7.AFW0C 8GB
Apacer Technology 78.CAGP7.AFW0C 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SF464128CKHI6DFSEG 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
内存RAM
Kingston 99U5403-492.A00LF 8GB
Kingston 99U5403-492.A00LF 8GB
G Skill Intl F4-2400C15-16GFX 16GB
G Skill Intl F4-2400C15-16GFX 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
内存RAM