Samsung M4 70T2953EZ3-CE6 1GB vs Teikon TMA851S6CJR6N-VKSC 4GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Teikon TMA851S6CJR6N-VKSC 4GB

Teikon TMA851S6CJR6N-VKSC 4GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 17

测试中的平均数值

Teikon TMA851S6CJR6N-VKSC 4GB

需要考虑的原因
Teikon TMA851S6CJR6N-VKSC 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 73

左右 -170% 更低的延时
更快的写入速度，GB/s

12.2 1,423.3

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Teikon TMA851S6CJR6N-VKSC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 27
读取速度，GB/s

3,510.5 17.0
写入速度，GB/s

1,423.3 12.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

476 2379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston MSI26D4S9D8ME-16 16GB

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Corsair CMK32GX4M2Z3600C18 16GB

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Samsung M4 70T2953EZ3-CE6 1GB

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Teikon TMA851S6CJR6N-VKSC 4GB

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King Tiger Technology TMKU8G868-240U 8GB

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Crucial Technology CT4G4DFS8213.M8FA 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Samsung M393B1K70CH0-CH9 8GB

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Corsair CMW8GX4M1Z3200C16 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Apacer Technology 78.DAGRL.4050C 16GB

Apacer Technology 78.DAGRL.4050C 16GB