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Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMK16GX4M2A2133C13 8GB

Samsung M4 70T5663CZ3-CE6 2GB vs Corsair CMK16GX4M2A2133C13 8GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Corsair CMK16GX4M2A2133C13 8GB

Corsair CMK16GX4M2A2133C13 8GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.2
    测试中的平均数值
Corsair CMK16GX4M2A2133C13 8GB 需要考虑的原因
Corsair CMK16GX4M2A2133C13 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 69
    左右 -109% 更低的延时
  • 更快的写入速度，GB/s
    11.6 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMK16GX4M2A2133C13 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 33
  • 读取速度，GB/s
    3,325.1 left arrow 16.2
  • 写入速度，GB/s
    1,441.2 left arrow 11.6
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    525 left arrow 2907

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Corsair CMK16GX4M2A2133C13 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMK16GX4M2A2133C13 8GB
Corsair CMK16GX4M2A2133C13 8GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9965600-027.A01G 16GB
Kingston 9965600-027.A01G 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK16GX4M2C3000C16 8GB
Corsair CMK16GX4M2C3000C16 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3733C17-4GVK 4GB
G Skill Intl F4-3733C17-4GVK 4GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Kingston KHYXPX-HYJ 8GB
Kingston KHYXPX-HYJ 8GB
内存RAM
Kingston 99U5471-052.A00LF 8GB
Kingston 99U5471-052.A00LF 8GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C16-32GTZR 32GB
G Skill Intl F4-3600C16-32GTZR 32GB
内存RAM
Crucial Technology CT102464BF160B.16F 8GB
Crucial Technology CT102464BF160B.16F 8GB
G Skill Intl F4-3333C16-16GTZSK 16GB
G Skill Intl F4-3333C16-16GTZSK 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
Gold Key Technology Co Ltd NMGD416E82-4400G 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Dust Leopard DDR4-2400 C16 8GB 8GB
Dust Leopard DDR4-2400 C16 8GB 8GB
内存RAM