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Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology BL16G36C16U4BL.M8FB1 16GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Crucial Technology BL16G36C16U4BL.M8FB1 16GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 20
    测试中的平均数值
Crucial Technology BL16G36C16U4BL.M8FB1 16GB 需要考虑的原因
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 69
    左右 -146% 更低的延时
  • 更快的写入速度，GB/s
    16.4 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 28
  • 读取速度，GB/s
    3,325.1 left arrow 20.0
  • 写入速度，GB/s
    1,441.2 left arrow 16.4
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    525 left arrow 3925

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Crucial Technology BL16G36C16U4BL.M8FB1 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
Crucial Technology BL16G36C16U4BL.M8FB1 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-4000C18-8GTRS 8GB
G Skill Intl F4-4000C18-8GTRS 8GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
G Skill Intl F4-3200C16-8GVRB 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston HP32D4U2S1ME-8 8GB
Kingston HP32D4U2S1ME-8 8GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Gloway International (HK) STK2400C15-16GB 16GB
Gloway International (HK) STK2400C15-16GB 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
Crucial Technology CT16G4DFD824A.C16FHD 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 9905625-029.A00G 8GB
Kingston 9905625-029.A00G 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Kingston 9905670-012.A00G 8GB
Kingston 9905670-012.A00G 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
Patriot Memory (PDP Systems) 3200 C16 Series 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Mushkin 99[2/7/4]190F 4GB
Mushkin 99[2/7/4]190F 4GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
Apacer Technology 78.CAGP7.C7C0B 8GB
Apacer Technology 78.CAGP7.C7C0B 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Transcend Information TS2GSH64V1B 16GB
Transcend Information TS2GSH64V1B 16GB
内存RAM