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Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB

Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology BL8G30C15U4R.M8FE1 8GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Crucial Technology BL8G30C15U4R.M8FE1 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.4
    测试中的平均数值
Crucial Technology BL8G30C15U4R.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G30C15U4R.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 69
    左右 -116% 更低的延时
  • 更快的写入速度，GB/s
    14.5 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BL8G30C15U4R.M8FE1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 32
  • 读取速度，GB/s
    3,325.1 left arrow 17.4
  • 写入速度，GB/s
    1,441.2 left arrow 14.5
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    525 left arrow 3385

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Nanya Technology M2Y51264TU88B0B-3C 512MB
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内存RAM
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内存RAM
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