Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology BLS16G4D26BFSB.16FD 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 18.1

测试中的平均数值

Crucial Technology BLS16G4D26BFSB.16FD 16GB

需要考虑的原因
Crucial Technology BLS16G4D26BFSB.16FD 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 69

左右 -146% 更低的延时
更快的写入速度，GB/s

13.9 1,441.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 28
读取速度，GB/s

3,325.1 18.1
写入速度，GB/s

1,441.2 13.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

525 3534

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Kingston ACR16D3LS1NGG/2G 2GB

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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

Crucial Technology BLS16G4D26BFSB.16FD 16GB

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Kingston 9905678-105.A00G 8GB

Kingston 9965433-034.A00LF 4GB

Kingston 9965433-034.A00LF 4GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Kingston 9905678-105.A00G 8GB

Kingston 9905678-105.A00G 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMSX32GX4M2A3200C22 16GB

Corsair CMSX32GX4M2A3200C22 16GB

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Kingston 9905584-016.A00LF 4GB

G Skill Intl F4-2800C15-4GVRB 4GB

G Skill Intl F4-2800C15-4GVRB 4GB