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Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB

Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Crucial Technology BLS16G4D30AESC.M16FE 16GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.4
    测试中的平均数值
Crucial Technology BLS16G4D30AESC.M16FE 16GB 需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 69
    左右 -146% 更低的延时
  • 更快的写入速度，GB/s
    13.1 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 28
  • 读取速度，GB/s
    3,325.1 left arrow 17.4
  • 写入速度，GB/s
    1,441.2 left arrow 13.1
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    525 left arrow 3437

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
内存RAM
Micron Technology 4ATF51264HZ-3G2J1 4GB
Micron Technology 4ATF51264HZ-3G2J1 4GB
Avant Technology J641GU42J7240ND 8GB
Avant Technology J641GU42J7240ND 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Corsair CMK64GX4M8B2800C14 8GB
Corsair CMK64GX4M8B2800C14 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 9905744-062.A00G 32GB
Kingston 9905744-062.A00G 32GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Kingston 9905630-005.A00G 8GB
Kingston 9905630-005.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
SK Hynix HMA81GR7MFR8N-UH 8GB
SK Hynix HMA81GR7MFR8N-UH 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
Crucial Technology CT4G4DFS8213.C8FAR11 4GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
Team Group Inc. TEAMGROUP-D4-3733 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMK32GX4M4K4133C19 8GB
Corsair CMK32GX4M4K4133C19 8GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9965589-017.D00G 8GB
Kingston 9965589-017.D00G 8GB
内存RAM
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM