Samsung M4 70T5663CZ3-CE6 2GB vs Crucial Technology CT8G4SFRA32A.M8FJ 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.6

测试中的平均数值

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4SFRA32A.M8FJ 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 69

左右 -116% 更低的延时
更快的写入速度，GB/s

13.4 1,441.2

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 32
读取速度，GB/s

3,325.1 16.6
写入速度，GB/s

1,441.2 13.4
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

525 2955

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 2GB-DDR2 800Mhz 2GB

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Micron Technology 16ATF2G64AZ-2G6D1 16GB

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Samsung M471B5273EB0-CK0 4GB

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A-DATA Technology AX4S2800316G18-B 16GB

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A-DATA Technology VDQVE1B16 2GB

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Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

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Teikon TMA851U6AFR6N-UHHC 4GB

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Samsung M378B5773DH0-CH9 2GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CM4X16GC3600C18K2D 16GB

Corsair CM4X16GC3600C18K2D 16GB