Samsung M4 70T5663CZ3-CE6 2GB vs EVGA 16G-D4-2800-MR 4GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 13.2

测试中的平均数值

EVGA 16G-D4-2800-MR 4GB

需要考虑的原因
EVGA 16G-D4-2800-MR 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 69

左右 -77% 更低的延时
更快的写入速度，GB/s

9.4 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

EVGA 16G-D4-2800-MR 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 39
读取速度，GB/s

3,325.1 13.2
写入速度，GB/s

1,441.2 9.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Crucial Technology CT25664BA160B.C16F 2GB

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Crucial Technology BL16G32C16S4B.M16FE1 16GB