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Samsung M4 70T5663CZ3-CE6 2GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Samsung M4 70T5663CZ3-CE6 2GB vs Gloway International Co. Ltd. TYP4U3000E16082C 8GB

总分
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Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Gloway International Co. Ltd. TYP4U3000E16082C 8GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 16.5
    测试中的平均数值
Gloway International Co. Ltd. TYP4U3000E16082C 8GB 需要考虑的原因
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    53 left arrow 69
    左右 -30% 更低的延时
  • 更快的写入速度，GB/s
    9.6 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 53
  • 读取速度，GB/s
    3,325.1 left arrow 16.5
  • 写入速度，GB/s
    1,441.2 left arrow 9.6
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    525 left arrow 2301

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Gloway International Co. Ltd. TYP4U3000E16082C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
Gloway International Co. Ltd. TYP4U3000E16082C 8GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C16-8GFXR 8GB
G Skill Intl F4-2400C16-8GFXR 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMK16GX4M2D2666C16 8GB
Corsair CMK16GX4M2D2666C16 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
Crucial Technology CT8G4DFS824A.C8FBD1 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
G Skill Intl F4-2666C15-4GRR 4GB
G Skill Intl F4-2666C15-4GRR 4GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
G Skill Intl F4-2133C15-8GFX 8GB
G Skill Intl F4-2133C15-8GFX 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Apacer Technology 78.CAGNT.4050B 8GB
Apacer Technology 78.CAGNT.4050B 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
G Skill Intl F4-3000C14-16GVK 16GB
G Skill Intl F4-3000C14-16GVK 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-16GTZA 16GB
G Skill Intl F4-3200C16-16GTZA 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
EXCELERAM EKBLACK4163016AD 8GB
EXCELERAM EKBLACK4163016AD 8GB
内存RAM
Kingston KHX16LC9/8GX 8GB
Kingston KHX16LC9/8GX 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Kingston MSI24D4S7S8MH-8 8GB
Kingston MSI24D4S7S8MH-8 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
内存RAM