Samsung M4 70T5663CZ3-CE6 2GB vs Kingston 9905598-040.A00G 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Kingston 9905598-040.A00G 16GB

Kingston 9905598-040.A00G 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.7

测试中的平均数值

Kingston 9905598-040.A00G 16GB

需要考虑的原因
Kingston 9905598-040.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 69

左右 -200% 更低的延时
更快的写入速度，GB/s

7.8 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Kingston 9905598-040.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 23
读取速度，GB/s

3,325.1 14.7
写入速度，GB/s

1,441.2 7.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 2492

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston KHX3200C18D4/4G 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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G Skill Intl F4-2666C15-16GVK 16GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Crucial Technology BL51264BA160A.16FH 4GB

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Samsung M391B5673EH1-CH9 2GB

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Kingston 9905700-013.A00G 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

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Avant Technology W641GU48J7240ND 8GB

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Avant Technology J642GU42J2320NQ 16GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Panram International Corporation D4N2400PS-8G 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

SK Hynix HMT41GU7MFR8A-H9 8GB

Apacer Technology GD2.1542WS.003 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Crucial Technology BLE4G4D26AFEA.8FAD 4GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

SpecTek Incorporated 16G 2666 CL 19 16GB

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