Samsung M4 70T5663CZ3-CE6 2GB vs Micron Technology 36ASF4G72PZ-2G3D1 32GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 10.6

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G3D1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3D1 32GB

报告一个错误

低于PassMark测试中的延时，ns

34 69

左右 -103% 更低的延时
更快的写入速度，GB/s

8.1 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 34
读取速度，GB/s

3,325.1 10.6
写入速度，GB/s

1,441.2 8.1
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 2237

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston K531R8-MIN 4GB

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Corsair CMD8GX4M2B3600C18 4GB

Corsair CMD8GX4M2B3600C18 4GB

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Micron Technology 16ATF2G64HZ-2G3H1 16GB

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Kingston KVR16N11/8-SP 8GB

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G Skill Intl F4-4000C18-8GTZ 8GB

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Kingston ACR16D3LS1KNG/4G 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB