Samsung M4 70T5663CZ3-CE6 2GB vs Micron Technology 8R8F1G64HZ-2G3B1 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.8

测试中的平均数值

Micron Technology 8R8F1G64HZ-2G3B1 8GB

需要考虑的原因
Micron Technology 8R8F1G64HZ-2G3B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 69

左右 -146% 更低的延时
更快的写入速度，GB/s

6.8 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 28
读取速度，GB/s

3,325.1 14.8
写入速度，GB/s

1,441.2 6.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 2014

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Avant Technology J642GU42J9266N2 16GB

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A-DATA Technology DQVE1908 512MB

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Kingston KHX1600C9S3L/4G 4GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Crucial Technology BL16G36C16U4B.M16FE1 16GB

Samsung M393B5170FH0-CK0 4GB

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Corsair CMU32GX4M2A2400C14 16GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Apacer Technology 78.B1GM3.C7W0B 4GB

Apacer Technology 78.B1GM3.C7W0B 4GB