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Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB

Samsung M4 70T5663CZ3-CE6 2GB vs Micron Technology 8R8F1G64HZ-2G3B1 8GB

总分
star star star star star
Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分
star star star star star
Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

差异 规格 评论

差异

Samsung M4 70T5663CZ3-CE6 2GB 需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.8
    测试中的平均数值
Micron Technology 8R8F1G64HZ-2G3B1 8GB 需要考虑的原因
Micron Technology 8R8F1G64HZ-2G3B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 69
    左右 -146% 更低的延时
  • 更快的写入速度，GB/s
    6.8 left arrow 1,441.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T5663CZ3-CE6 2GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    69 left arrow 28
  • 读取速度，GB/s
    3,325.1 left arrow 14.8
  • 写入速度，GB/s
    1,441.2 left arrow 6.8
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    525 left arrow 2014

Samsung M4 70T5663CZ3-CE6 2GB RAM的比较

Samsung M4 70T5663QZ3-CE6 2GB
Nanya Technology NT2GT64U8HD0BN-3C 2GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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Ramaxel Technology RMSA3260MB78HAF2400 8GB
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Samsung M4 70T5663CZ3-CE6 2GB
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Micron Technology 8R8F1G64HZ-2G3B1 8GB
Micron Technology 8R8F1G64HZ-2G3B1 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
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Corsair CMK8GX4M2B4266C19 4GB
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Micron Technology 8G2666CL19 8GB
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Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
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内存RAM
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Nanya Technology M2X4G64CB8HG9N-DG 4GB
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Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
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内存RAM
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AMD R7416G2133U2S 16GB
内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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Crucial Technology CT4G4DFS824A.C8FADP 4GB
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