Samsung M4 70T5663CZ3-CE6 2GB vs Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.3

测试中的平均数值

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 69

左右 -103% 更低的延时
更快的写入速度，GB/s

13.4 1,441.2

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 34
读取速度，GB/s

3,325.1 20.3
写入速度，GB/s

1,441.2 13.4
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

525 3343

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

Corsair CMH16GX4M2Z3200C16 8GB

Corsair CMH16GX4M2Z3200C16 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB

Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Neo Forza NMUD480E86-3200 8GB

Neo Forza NMUD480E86-3200 8GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Gloway International (HK) STK4U2400D17081C 8GB

Gloway International (HK) STK4U2400D17081C 8GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

G Skill Intl F4-2800C15-8GVSB 8GB

G Skill Intl F4-2800C15-8GVSB 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Corsair CMT32GX4M2C3466C16 16GB

Corsair CMT32GX4M2C3466C16 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Transcend Information AQD-D4U4GN21-SG 4GB

Transcend Information AQD-D4U4GN21-SG 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

G Skill Intl F4-4266C17-16GTRGB 16GB

G Skill Intl F4-4266C17-16GTRGB 16GB

Samsung M393B5170FH0-CH9 4GB

Samsung M393B5170FH0-CH9 4GB

Kingston 9905598-040.A00G 16GB

Kingston 9905598-040.A00G 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology BLS4G4D26BFSC.8FB 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

UMAX Technology D4-2133-4GB-512X8-L 4GB

UMAX Technology D4-2133-4GB-512X8-L 4GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Corsair CMV16GX4M1L2400C16 16GB

Corsair CMV16GX4M1L2400C16 16GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Corsair CMV32GX4M1A2666C18 32GB

Corsair CMV32GX4M1A2666C18 32GB