Samsung M4 70T5663QZ3-CE6 2GB vs G Skill Intl F4-3600C18-32GTZR 32GB

总分

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

总分

G Skill Intl F4-3600C18-32GTZR 32GB

G Skill Intl F4-3600C18-32GTZR 32GB

差异规格评论

差异

Samsung M4 70T5663QZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663QZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.5

测试中的平均数值

G Skill Intl F4-3600C18-32GTZR 32GB

需要考虑的原因
G Skill Intl F4-3600C18-32GTZR 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 68

左右 -127% 更低的延时
更快的写入速度，GB/s

16.3 1,702.6

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663QZ3-CE6 2GB

G Skill Intl F4-3600C18-32GTZR 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

68 30
读取速度，GB/s

3,886.6 17.5
写入速度，GB/s

1,702.6 16.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

654 3837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Kingmax Semiconductor GLLH23F-18KIIP------ 16GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Asgard VMA42UG-MEC1U2AW1 8GB

Asgard VMA42UG-MEC1U2AW1 8GB

Qimonda 72T128420EFA3SB2 1GB

Qimonda 72T128420EFA3SB2 1GB

Essencore Limited KD48GS88A-26N1600 8GB

Essencore Limited KD48GS88A-26N1600 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CMD32GX4M2B3466C16 16GB

Corsair CMD32GX4M2B3466C16 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Corsair CMR32GX4M4C3466C16 8GB

Corsair CMR32GX4M4C3466C16 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

Micron Technology 18ADF2G72AZ-2G6E1 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3200C16-8GTZ 8GB

G Skill Intl F4-3200C16-8GTZ 8GB

Smart Modular SH5641G8FJ8NWRNSQG 8GB

Smart Modular SH5641G8FJ8NWRNSQG 8GB

G Skill Intl F4-2400C15-16GTZRX 16GB

G Skill Intl F4-2400C15-16GTZRX 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Crucial Technology CT16G4DFD8266.M16FD 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Kingston XJ69DF-HYA 8GB

Kingston XJ69DF-HYA 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB

G Skill Intl F4-4266C17-8GTZRB 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Kingston 9905622-025.A00G 4GB

Kingston 9905622-025.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D26BFSB.8FB 4GB

Crucial Technology BLS4G4D26BFSB.8FB 4GB